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November 2013
FQPF5N40
N-Channel QFET ? MOSFET
400 V, 3.0 A, 1.6 Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
Features
? 3.0 A, 400 V, R DS(on) = 1.6 ? (Max.) @ V GS = 10 V,
I D = 1.5 A
? Low Gate Charge (Typ. 10 nC)
? Low Crss (Typ. 7 pF)
? 100% Avalanche Tested
active power factor correction (PFC), and electronic lamp
ballasts.
D
D
G
S
TO-220F
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF5N40
400
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
3.0
1.9
A
A
I DM
V GSS
Drain Current
Gate-Source Voltage
- Pulsed
(Note 1)
12
± 30
A
V
E AS
I AR
E AR
dv/dt
P D
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate Above 25°C
(Note 2)
(Note 1)
(Note 1)
(Note 3)
290
3.0
3.5
4.5
35
0.28
mJ
A
mJ
V/ns
W
W/°C
T J , T STG
T L
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds
-55 to +150
300
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF5N40
3.57
62.5
Unit
°C / W
?2000 Fairchild Semiconductor Corporation
FQPF5N40 Rev. C1
1
www.fairchildsemi.com
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